mixers - i/q receivers - chip 3 3 - 138 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC571 gaas mmic i/q downconverter 21 - 25 ghz v03.0808 general description features typical applications the HMC571 is a compact gaas mmic i/q downconverter chip which provides a small signal conversion gain of 10 db with a noise gure of 3 db and 24 db of image rejection across the frequency band. the device utilizes an lna followed by an image reject mixer which is driven by an active x2 multiplier. the image reject mixer eliminates the need for a lter following the lna, and removes thermal noise at the image frequency. i and q mixer outputs are provided and an external 90 hybrid is needed to select the required sideband. all data shown below is taken with the chip mounted in a 50 ohm test xture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port. this product is a much smaller alternative to hybrid style image reject mixer downconverter assemblies. electrical speci cations, t a = +25 c, if = 100 mhz, lo = +4 dbm, vdd = 3.5 vdc* parameter min. typ. max. min. typ. max. units frequency range, rf 21.2 - 23.7 21 - 25 ghz frequency range, lo 9 - 14 9 - 14 ghz frequency range, if dc - 3.5 dc - 3.5 ghz conversion gain (as irm) 9 11 8 11 db noise figure 3 3 db image rejection 19 22 19 24 db 1 db compression (input) -9 -6 -11 -8 dbm 2 lo to rf isolation 38 45 38 45 db 2 lo to if isolation 28 32 28 32 db ip3 (input) +2 +5 -2 +5 dbm amplitude balance 0.3 0.7 db phase balance 5 5 deg total supply current 125 165 125 165 ma *data taken as irm with external if hybrid functional diagram the HMC571 is ideal for: ? point-to-point and point-to-multi-point radio ? military radar, ew & elint ? satellite communications conversion gain: 11 db image rejection: 24 db 2 lo to rf isolation: 40 db noise figure: 3 db input ip3: +5 dbm die size: 2.33 x 2.51 x 0.10 mm
mixers - i/q receivers - chip 3 3 - 139 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature input p1db vs. temperature conversion gain vs. lo drive image rejection vs. temperature return loss input ip3 vs. lo drive data taken as irm with external if hybrid -10 -5 0 5 10 15 20 20 21 22 23 24 25 26 +25c +85c -55c conversion gain (db) rf frequency (ghz) 5 10 15 20 25 30 20 21 22 23 24 25 26 +25c +85c -55c image rejection (db) rf frequency (ghz) -10 -5 0 5 10 15 20 20 21 22 23 24 25 26 0dbm +2dbm +4dbm +6dbm +8dbm conversion gain (db) rf frequency (ghz) -25 -20 -15 -10 -5 0 8 10121416182022242628 rf lo return loss (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 20 21 22 23 24 25 26 +25c +85c -55c p1db (dbm) rf frequency (ghz) -10 -5 0 5 10 15 20 21 22 23 24 25 26 lo = 0 dbm lo = +2 dbm lo = +4 dbm lo = +6 dbm lo = +8 dbm ip3 (dbm) rf frequency (ghz) HMC571 v03.0808 gaas mmic i/q downconverter 21 - 25 ghz
mixers - i/q receivers - chip 3 3 - 140 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com isolations if bandwidth* amplitude balance vs. lo drive phase balance vs. lo drive quadrature channel data taken without if hybrid * conversion gain data taken with external if hybrid, lo frequency xed at 10.3 ghz and rf varied -60 -50 -40 -30 -20 -10 0 10 20 21 22 23 24 25 26 isolation (db) rf frequency (ghz) 2lo/if2 2lo/if1 rf/if1 rf/if2 2lo/rf -20 -15 -10 -5 0 5 10 15 20 0.5 1 1.5 2 2.5 3 3.5 conversion gain return loss response (db) if frequency (ghz) -1 -0.5 0 0.5 1 1.5 2 2.5 20 21 22 23 24 25 26 lo = 0 dbm lo = +2 dbm lo = +4 dbm lo = +6 dbm lo = +8 dbm amplitude balance (db) rf frequency (ghz) -5 0 5 10 15 20 20 21 22 23 24 25 26 lo = 0 dbm lo = +2 dbm lo = +4 dbm lo = +6 dbm lo = +8 dbm phase balance (degrees) rf frequency (ghz) 0 2 4 6 8 0.5 1 1.5 2 2.5 3 3.5 4 0dbm +2dbm +4dbm +6dbm +8dbm noise figure (db) if frequency (ghz) noise figure vs. lo drive, lo frequency = 10.3 ghz 0 1 2 3 4 5 6 18 19 20 21 22 0dbm +2dbm +4dbm +6dbm +8dbm noise figure (db) rf frequency (ghz) noise figure vs. lo drive, if frequency = 100 mhz HMC571 v03.0808 gaas mmic i/q downconverter 21 - 25 ghz
mixers - i/q receivers - chip 3 3 - 141 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings rf +2 dbm lo drive + 13 dbm vdd 5.5v channel temperature 175c continuous pdiss (t=85c) (derate 10.2 mw/c above 85c) 920 mw thermal resistance (r th ) (channel to package bottom) 98.3 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1b electrostatic sensitive device observe handling precautions mxn spurious outputs nlo mrf01234 0xx28192634 1333002944 26779626744 3 xxxxxx7987 4 xxxxxxxxxx rf = 22 ghz @ -20 dbm lo = 10.5 ghz @ +4 dbm data taken without if hybrid all values in dbc below if power level (1rf -2lo = 1 ghz) HMC571 v03.0808 gaas mmic i/q downconverter 21 - 25 ghz
mixers - i/q receivers - chip 3 3 - 142 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC571 v03.0808 gaas mmic i/q downconverter 21 - 25 ghz outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is 0.004 3. bond pad metalization: gold 4. backside metalization: gold 5. backside metal is ground 6. overall die size 0.002 die packaging information [1] standard alternate gp-1 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
mixers - i/q receivers - chip 3 3 - 143 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1vddrf power supply for rf lna. external rf bypass capacitors are required. 2vddlo2 power supply for second stage of lo ampli er. external rf bypass capacitors are required. 3vddlo power supply for rst stage of lo ampli er. external rf bypass capacitors are required. 4lo this pad is ac coupled and matched to 50 ohms. 5if1 this pad is dc coupled for applications not requir- ing operation to dc. this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary frequency range. for operation to dc, this pad must not source /sink more than 3 ma of current or die non - function and possible die failure will result. 6if2 7rf this pad is ac coupled and matched to 50 ohms. gnd the backside of the die must be connected to rf/dc ground. pad descriptions typical application HMC571 v03.0808 gaas mmic i/q downconverter 21 - 25 ghz
mixers - i/q receivers - chip 3 3 - 144 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC571 v03.0808 gaas mmic i/q downconverter 21 - 25 ghz assembly drawing
mixers - i/q receivers - chip 3 3 - 145 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and a t . eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated o n the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC571 v03.0808 gaas mmic i/q downconverter 21 - 25 ghz
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